D444 Mosfet

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CASS
D444 Datasheet Preview

N-Channel Trench Power MOSFET

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General Description
MOSFET technology with a low resistance package to
suitable for use in PWM, load switching and general
Features
RDS(ON)<40mΩ @ VGS=10V
● High UIS and UIS 100% Test
● Power switching application
D444
Schematic Diagram
ID = 15A
Package Marking and Ordering Information
Device
D444
TO-252
-
Symbol
VDS Drain-Source Voltage (VGS=0V)
ID (DC)
IDM (pluse)
EAS
Drain Current (DC) at Tc=100℃
Maximum Power Dissipation(Tc=25℃)
TJ,TSTG
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Tape width
Quantity
Value
±20
10.5
23
-55 To 175
V
A
A
mJ
CASS SEMICONDUCTOR CO., LTD
http://www.casssemi.com V3.0

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CASS
D444 Datasheet Preview

N-Channel Trench Power MOSFET

No Preview Available !

Symbol
RJC
Value
D444
6.6
℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Min
BVDSS
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VGS=0V ID=250μA
VDS=60V,VGS=0V
IGSS Gate-Body Leakage Current
VGS(th) Gate Threshold Voltage
1
VGS=10V, ID=12A
VGS=4.5V, ID=6A
2.3
37
1
±100
45
V
μA
V
mΩ
gFS Forward Transconductance
Coss Output Capacitance
Qg Total Gate Charge
Qgd Gate-Drain Charge
td(on)
tr Turn-on Rise Time
Turn-Off Delay Time
Source-Drain Diode Characteristics
VDS=30V,VGS=0V
VDS=30V,ID=15A
VDS=30V,RL=2.5Ω
12
66
13.5
6.2
3.4
2
PF
PF
nC
nS
nS
ISD Source-Drain Current(Body Diode)
ISDM Pulsed Source-Drain Current(Body Diode)
trr Reverse Recovery Time(Note 1)
TJ=25℃,ISD=1A,VGS=0V
di/dt=100A/μs
0.74 0.99
27 nS
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃
-2-

Número de Parte: AOD4454

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente |Vds|: 150 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4.6 V

Tiempo de elevación (tr): 5.5 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 0.094 Ohm

Empaquetado / Estuche: TO-252


AOD4454 Datasheet (PDF)

0.1. aod4454.pdf Size:291K _aosemi

Harga Mosfet D444

AOD4454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD4454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

0.2. aod4454.pdf Size:266K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD4454FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. aod446.pdf Size:193K _aosemi

AOD446N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 75VThe AOD446 uses advanced trench technology andID = 10 A (VGS = 20V)design to provide excellent RDS(ON) with low gateRDS(ON)

9.2. aod442 aoi442.pdf Size:246K _aosemi

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

9.3. aod448.pdf Size:193K _aosemi

AOD448N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD448 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 75A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

9.4. aod442.pdf Size:246K _aosemi

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

9.5. aod442g.pdf Size:349K _aosemi

AOD442G60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)

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9.6. aod444 aoi444.pdf Size:248K _aosemi

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

9.7. aod444.pdf Size:248K _aosemi

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

9.8. aod444.pdf Size:1741K _kexin

SMD Type MOSFETN-Channel MOSFETAOD444 (KOD444)TO-252Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)D0.127 RDS(ON) 85m (VGS = 4.5V)+0.10.80-0.1max+ 0.12.3 0.60- 0.1+0.154.60 -0.15GS Absolute Maximum Ratings Ta = 25Parame

9.9. aod446.pdf Size:265K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD446FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.10. aod442.pdf Size:249K _inchange_semiconductor

Transistor Mosfet D444

isc N-Channel MOSFET Transistor AOD442FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

9.11. aod442g.pdf Size:249K _inchange_semiconductor

Persamaan Mosfet D444

isc N-Channel MOSFET Transistor AOD442GFEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.12. aod444.pdf Size:265K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD444FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... AOD421, AOD422, AOD423, AOD424, AOD425, AOD4286, AOD442, AOD444, IRF150, AOD446, AOD450, AOD4504, AOD454A, AOD456, AOD458, AOD464, AOD468.


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